IGBT

US$15.00 / Piece

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What is High Efficiency Fp50r12kt3 Three Phase Input Rectifier Power IGBT Module for Infineon

Name: High Efficiency Fp50r12kt3 Three Phase Input Rectifier Power IGBT Module for Infineon
Uploaded: 2026-06-04T11:16:48+08:00
Description: SPECIFICATION Product Name IGBT module Condition Original Model Number FP75R12N2T7 Description In Stock Warranty 1 year Configuration PIM Three Phase Input Rectifier Technology IGBT7 - T7 VCES in V 12

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Price

Min. Order Reference FOB Price

10 Pieces US$15.00 / Piece

Sepcifications

Application Industrial
Manufacturing Technology Integrated Circuits Device
Material Element Semiconductor
Model Fp50r12kt3
Package Econopim
Signal Processing Digital
Type Intrinsic Semiconductor
Transport Package Box/Carton
Specification 122 mm*62mm
Origin China
Product Name IGBT Module
Condition 100% Original
Voltage 1200 V
IC 50 a
Housing Econopim
Qualification Industrial
Brand Hongjun

Product Description

SPECIFICATION Product Name IGBT module Condition Original Model Number FP75R12N2T7 Description In Stock Warranty 1 year Configuration PIM Three Phase Input Rectifier Technology IGBT7 - T7 VCES in V 1200 V ICnom in A 75 A Housing EconoPIM Application Industrial motor drives and ...

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Sichuan Focus Science and Technology Co., Ltd.

Diamond Member Since 2020

Audited Supplier

Rating & Reviews: 5.0/5.0

(3 Reviews)

Business Type Trading Company
Main Products Servo Motor, PLC, Inverter, Planetary Gearbox, Spindle Motor, Gear Motor, Circuit Breaker, ...
Year of Establishment 2020-03-06
Number of Employees 19
Address No. 1388 Middle Section Jiannan Avenue High-Tech Zone, Chengdu, Sichuan, China

IGBT Comparison

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Transaction Info
	High Efficiency Fp50r12kt3 Three Phase Input Rectifier Power IGBT Module for Infineon Contact Now	Quick View Wholesale 6 Inch Silicon Carbide Dummy Wafer Contact Now	Quick View Wholesale N/P Type Sic Wafer Silicon Carbide Wafer for Sale Contact Now	Quick View Semiconductor 8inch Prime Grade Silicon Carbide Wafer Contact Now	Quick View 6 Inch Silicon Carbide Sic Substrate Dummy Wafer Contact Now
Price	US$15.00 / Piece	US$125.00-150.00 / pc	US$125.00-150.00 / pc	US$3,210.00-3,235.00 / pc	US$125.00-150.00 / pc
Min Order	10 Pieces	25 pc	25 pc	25 pc	25 pc
Payment Terms	LC, T/T, D/P, PayPal, Western Union, Small-amount payment	T/T, PayPal	T/T, PayPal	T/T, PayPal	T/T, PayPal
Quality Control
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic, South Asia	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Application: Industrial; Manufacturing Technology: Integrated Circuits Device; Material: Element Semiconductor; Model: Fp50r12kt3; Package: Econopim; Signal Processing: Digital; Type: Intrinsic Semiconductor; Product Name: IGBT Module; Condition: 100% Original; Voltage: 1200 V; IC: 50 a; Housing: Econopim; Qualification: Industrial; Brand: Hongjun;	Application: Semi Standard; Material: Si; Model: N-Type; Type: N-type Semiconductor; Growth Method: Fz; Dopant: Boron; Frront Side: Polished; Diameter: 150±0.3mm; Thickness: 350±25μm;	Application: Semi Standard; Material: Si; Model: N-Type; Type: N-type Semiconductor; Growth Method: Fz; Dopant: Boron; Frront Side: Polished; Diameter: 150±0.3mm; Thickness: 350±25μm;	Application: Semi Standard; Material: Si; Model: N-Type; Type: N-type Semiconductor; Growth Method: Fz; Frront Side: Polished; Edge: Etched; Diameter: 200±0.3mm; Thickness: 350±25μm;	Application: Semi Standard; Material: Si; Model: N-Type; Type: N-type Semiconductor; Growth Method: Fz; Dopant: Boron; Frront Side: Polished; Diameter: 150±0.3mm; Thickness: 350±25μm;
Supplier Name	Sichuan Focus Science and Technology Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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What is High Efficiency Fp50r12kt3 Three Phase Input Rectifier Power IGBT Module for Infineon

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