| Specification |
Encapsulation Structure: Chip Transistor;
Installation: Plug-in Triode;
Working Frequency: Low Frequency;
Power Level: Medium Power;
Function: Photosensitive, Darlington Tube, Power Triode, Switching Triode;
Structure: NPN;
Material: Silicon;
Product Name: Triode/Transistors;
Luminous Intensity: Standard;
Operating Temperature: -55ºC ~ +150ºC;
Features1: Glass Passivated Chip;
Features2: Low Forward Voltage Drop;
Features3: Ideal for Printed Circuit Board;
Features4: High Surge Current Capability;
PCBA Assembly: Welcome, SMT and DIP Soldering;
Customize: Avaliable;
MOQ: 10PCS;
Best Price: Please Contact Us;
Delivery Time: Sample Is Available Within 3days;
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Function: Power Triode, Switching Triode, Power Transistor;
Structure: NPN;
Product Number: Mje13005;
Subcategory: Transistor;
Voltage - Collector Emitter Breakdown: 400V;
Package: Tube;
Application: High Voltage Switch Mode Application;
Vcesat-Max: 1 V;
Detailed Description: Transistor;
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Encapsulation Structure: Gold Sealed Transistor;
Installation: Through Hole;
Working Frequency: High Frequency;
Power Level: High Power;
Function: Power Triode;
Structure: NPN;
Material: Germanium;
Detailed Description: 7 a, 160 V, N-Channel, Si, Power, Mosfet, to-3p;
Category: Transistors - Fets, Mosfets - Single;
Fet Technology: Metal-Oxide Semiconductor;
Channel Type: N;
Channel Mode: Enhancement;
Fet Type: N-Channel;
Description: Mosfet N-CH 160V 7A to-3p;
Ds Breakdown Voltage-Min: 160 V;
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Installation: Through Hole;
Function: Power Triode, Power Mosfet;
Material: Plastic and Copper;
Vgs Max: 20.0V;
Operating Temperature: Standard;
Package: to-220;
Ptot Max: 83.0W;
Product Number: Irfz44npbf;
Description: Mosfet N-CH 55V 49A to-220ab;
Fet Type: N-Channel;
Product Category: Mosfet;
Technology: Si;
Mounting Style: Through Hole;
Transistor Type: 1 N-Channel;
Transistor Polarity: N-Channel;
Packaging: Tube;
Height: 15.65 mm;
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Function: Power Triode;
Condition: Brand Newand Original;
Product Number: Irfs630A;
Configuration: Single with Built-in Diode;
Fet Technology: Metal-Oxide Semiconductor;
Pulsed Drain Current-Max (Idm): 36 a;
Description: N-Channel Power Mosfet;
Package: Bulk;
Polarity/Channel Type: N-Channel;
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