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Home China Products Directory Electrical & Electronics Semiconductor Intrinsic Semiconductor Undoped Semiconductor

Undoped Semiconductor

14 results for Undoped Semiconductor

Compound Semiconductor · Optoelectronic Semiconductor · SMD

Customized Fz Undoped Silicon Wafer Single Crystal with High Resistivity 2-12inch Semiconductor Wafers

US$ 1-100 / Piece
25 Pieces  (MOQ)
Customized FZ Undoped Silicon Wafer Single Crystal with High Resistivity 2-12 Inch Semiconductor wafers 1. what is Oxide silicon wafers and it's application: The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which i

RoHS · Compound Semiconductor

Fz Ssp 6inch N-Type Undoped Silicon Wafers

25 Pieces  (MOQ)
Product Description 1. what is silicon wafers and it's application: A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices that enrich our lives. Silicon wafer is the most common material and widely used for a varity of hig

Inp (Indium Phosphide) Semiconductor/Substrate Material Light Source/Detector/Optical Fiber Communication

US$ 50 / Piece
1 Piece  (MOQ)
Product Description Indium phosphide (InP) Indium phosphide (InP) is one of the important iii-v compound semiconductor materials and a new generation of electronic functional materials after Si and GaAs. Because the InP in melting point temperature to 1335 + 7 k, p extract from 27.5 ATM, so InP

Gallium Nitride GaN Template on Sapphire (0001) N-Type P-Type Semi-Insulating

US$ 1-100 / Piece
1 Piece  (MOQ)
Gallium Nitride GaN Template on Sapphire (0001) N-type P-type Semi-Insulating 1. What is templates We use the term "template" to describe our products as they are different to substrates. Specifically, a template is a composite or engineered substrate, where one or more layers are added to the o

Promotion Price 8 12 Inch Undoped Low Defect Polishing Film Silicon Wafer

US$ 0.5-10 / pcs
25 pcs  (MOQ)
Production Description: Promotion Price 8 12 Inch Undoped Low Defect Polishing Film Silicon Wafer YSJ TECHNOLOGY provides numerous standard Single Side polished (SSP)wafer options, suitable for a wide range of applications.We have a wide variety of Single Side Polished (SSP) Wafers in sto

Optoelectronic Semiconductor · Television · Compound Semiconductor

6 Inch Linbo3 Ln Wafer Y128° Single Side Polished and Blackened

US$ 55-69 / Piece
10 Pieces  (MOQ)
Lithium niobate LiNbO 3 LN lithium niobate is an inorganic substance with a chemical formula of LiNbO 3 . It is a negative crystal and a ferroelectric crystal . The polarized lithium niobate crystal has piezoelectric, ferroelectric, photoelectric, nonlinear optics, thermoelectric, etc. A multi-fu

Optoelectronic Semiconductor · Television · Compound Semiconductor

Y42 D100*0.25 Litao3 Saw Filter Wafer

US$ 28-35 / Piece
10 Pieces  (MOQ)
Lithium tantalate LiTaO 3 LT lithium tantalate LiTaO 3 crystal is an important multifunctional crystal material. The crystal has excellent piezoelectric, ferroelectric, acousto-optic and electro-optic effects , so it has become an important choice in the fields of surface acoustic wave SAW devi

Diode · CE · RoHS

4-Inch Self-Supporting GaN Wafer (undoped) LED China

US$ 10-30 / piece
10 piece  (MOQ)
GaN single crystal substrates for RF electronics GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance. HEMT devices based on GaN single crystal substr
  • Hangzhou HCJingRui Technology Co., Ltd.
  • Zhejiang, China
  • Contact Now

2-Inch Self-Supporting GaN Wafer (undoped)

US$ 10-30 / piece
10 piece  (MOQ)
GaN single crystal substrates for RF electronics GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance. HEMT devices based on GaN single cr
  • Hangzhou HCJingRui Technology Co., Ltd.
  • Zhejiang, China
  • Contact Now

2010+ · DIP(Dual In-line Package) · Digital

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped

US$ 300 / Piece
1 Piece  (MOQ)
GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) GaN layer thickness up to 7μm on sapphire 3.p-type GaN(Mg-doping)

  • QWhat are common uses for Undoped Semiconductor products in the Electrical & Electronics industry?

    Undoped Semiconductor products find application in various electronic devices like diodes, transistors, and solar cells in the Electrical & Electronics industry. A leading manufacturer of Undoped Semiconductors in China can provide you with products tailored to your specific needs.

  • QHow to identify reliable suppliers for Undoped Semiconductor products in China?

    In your search for Undoped Semiconductor suppliers in China, rely on platforms such as B2B websites, trade shows, and industry referrals. Evaluate suppliers based on quality certifications, years in business, and customer reviews. Engaging with a trusted supplier is crucial for ensuring product quality.

  • QWhat advantages come with manufacturing Undoped Semiconductor products in China?

    Manufacturing Undoped Semiconductor products in China offers cost efficiency, technological expertise, and access to a vast supply chain network. Partnering with a prominent supplier significantly enhances the quality and product development process of Undoped Semiconductor solutions.

2010+ · DIP(Dual In-line Package) · Digital

4 Inch GaN on Silicon Epitaxial Wafer

US$ 1200 / Piece
1 Piece  (MOQ)
GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) GaN layer thickness up to 7μm on silicon(111) 3.HEMT structures

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate)

US$ 1000 / Piece
1 Piece  (MOQ)
SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface Orientation (0001) ± 0.2°Ga face Off-cut 0.5°C-plane off angle toward M-axis 0.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate

US$ 2000 / Piece
1 Piece  (MOQ)
SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface Orientation (0001) ± 0.2°Ga face Off-cut 0.5°C-plane off angle toward M-axis 0.

Semiconductor Gallium Arsenide Wafer (GaAs Wafer)

1 Piece  (MOQ)
Gallium Arsenide Wafer Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate is commonly applied in light-emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistors, and heterojunction bipolar transistors. Gallium Arsenide Wafer Physical Properties G
  • Changsha Advanced Engineering Materials ...
  • Hunan, China
  • Contact Now
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